2SK2225 silicon n-channel mos fet november 1996 application high speed power switching features high breakdown voltage (v dss = 1500 v) high speed switching low drive current no secondary breakdown suitable for switching regulator, dc-dc converter outline
to-3pfm 1. gate
2. drain
3. source d g s 1 2 3
2SK2225 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 1500 v gate to source voltage v gss 20 v drain current i d 2a drain peak current i d(pulse) * 1 7a body to drain diode reverse drain current i dr 2a channel dissipation pch* 2 50 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2SK2225 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 1500 v i d = 10 ma, v gs = 0 gate to source leak current i gss 1 m av gs = 20 v, v ds = 0 zero gate voltage drain current i dss 500 m av ds =1200 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 4.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 9 12 w i d = 1 a v gs = 15 v* 1 forward transfer admittance |y fs | 0.45 0.75 s i d = 1 a v ds = 20 v* 1 input capacitance ciss 990 pf v ds = 10 v v gs = 0 f = 1 mhz output capacitance coss 125 pf reverse transfer capacitance crss 60 pf turn-on delay time t d(on) 17nsi d = 1 a v gs = 10 v r l = 30 w rise time t r 50ns turn-off delay time t d(off) 150 ns fall time t f 50ns body to drain diode forward voltage v df 0.9 v i f = 2 a, v gs = 0 body to drain diode reverse recovery time t rr 1750 ns i f = 20 a, v gs = 0, dif / dt = 100 a / m s note 1. pulse test
2SK2225 4 80
60
40
20 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 10 3 1 0.3 0.1 0.03 0.01 10 30 100 300 1000 3000 10000 1 ms operation in
this area is
limited by r ds(on) ta = 25 ? 100 ? 10 ? pw = 10 ms (1shot) dc operation (tc = 25 ?) 5
4
3
2
1 0 20 40 60 80 100 drain to source voltage v (v) ds drain current i (a) d typical output characteristics 15 v 10 v 7 v 6 v 5 v pulse test v = 4 v gs 8 v 2.0
1.6
1.2
0.8
0.4 0 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics tc = 75 ?
25 ?
?5 ? v = 25 v
pulse test ds 246810
2SK2225 5 50
40
30
20
10 0 gate to source voltage v (v) gs drain to source saturation voltage vs.
gate to source voltage v (v) ds(on) drain to source saturation voltage 4 8 12 16 20 2 a 1 a i = 3 a d 0.5 a pulse test drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source state resistance
vs. drain current 0.1 50 20 10 2 5 1 0.5 0.2 0.5 1 2 5 10 v = 10 v gs 15 v pulse test 20
16
12
8
4 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance
vs. temperature 0.5 a, 1 a i = 2 a d gs v = 15 v
pulse test forward transfer admittance |yfs| (s) drain current i (a) d forward transfer admittance vs.
drain current 10 2 5 1 0.2 0.5 0.1 0.05 0.1 0.2 0.5 1 2 5 tc = ?5 ?
25 ?
75 ? ds v = 25 v
pulse test
2SK2225 6 reverse drain current i (a) dr reverse recovery time trr (ns) body to drain diode reverse recovery time 5000 2000 1000 200 500 100 50 0.05 0.1 0.2 0.5 1 2 5 di / dt = 100 a / s, ta = 25 c v = 0, pulse test gs 10000 1000 100 10 0 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs.
drain to source voltage ciss coss crss v = 0
f = 1 mhz gs 10 20 30 40 50 1000
800
600
400
200 0 gate charge qg (nc) drain to source voltage v (v) ds 20
16
12
8
4 0 gate to source voltage v (v) gs dynamic input characteristics 20 40 60 80 100 v = 250 v
400 v
600 v dd v = 250 v
400 v
600 v dd i = 2.5 a d v gs ds v drain current i (a) d switching time t (ns) switching characteristics 1000 200 500 100 20 10 50 0.05 0.1 0.2 0.5 1 2 5 t f r t d(on) t d(off) t v = 10 v
pw = 2 ?
duty < 1 % gs
2SK2225 7 5
4
3
2
1 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs.
source to drain voltage pulse test v = 0, ? v gs 10 v, 15 v 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c
ch ?c = 2.50 ?/w, tc = 25 ? q g q
q tc = 25? normalized transient thermal impedance vs. pulse width d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse
2SK2225 8 vin monitor d.u.t. vin
10 v r l v
= 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout
monitor 50 w 90% 10% t f switching time test circuit waveform
2SK2225 9 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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